Transistor IRFP460 N-Channel MOSFET 500V 20amp TO-247

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The IRFP460 is an N-Channel MOSFET transistor with a maximum drain-source voltage of 500V and a maximum drain current of 20A.

Description

The IRFP460 is an N-Channel metal-oxide-semiconductor field-effect transistor (MOSFET) used for high-power switching applications. It operates by modulating the width of a channel between the source and drain terminals to control the flow of electrical current. The IRFP460 has a maximum drain-source voltage (VDS) rating of 500V, which means it can handle high voltage levels in a circuit. It also has a maximum drain current (ID) rating of 20A, indicating it can handle high current levels as well.

 

Here are some of the specifications of the IRFP460 N-Channel MOSFET:

  • Drain-Source Voltage (VDS): 500V
  • Drain Current (ID): 20A
  • Drain-Source On-State Resistance (RDS(on)): 6.0 milliOhms
  • Package: TO-247
  • Operating Temperature: -55°C to 175°C
  • Maximum Power Dissipation (PD): 378W
  • Transistor Polarity: N-Channel
  • Maximum Gate-Source Voltage (VGS): ±20V
  • Threshold Voltage (VGS(th)): 4V
  • Fast Switching Speed

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